| PART |
Description |
Maker |
| SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| ST500A7.51 ST500A9.1V T00023D T00023D-15 |
500 W Transient Voltage Suppressor
500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| P5KE6.0 P5KE6.0A P5KE6.5 P5KE6.5A P5KE14A P5KE14 P |
500 Watt Transient Voltage Suppressors 5.0 to 170 Volts 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
Micro Commercial Compon...
|
| 1N957B ON0020 1N958B 1N968B 1N965B 1N963B 1N961B |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35灏??,10V榻?撼?靛?锛?????绾崇ǔ??????)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压，玻璃齐纳稳压二极管) 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,15]V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,20V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压，玻璃齐纳稳压二极管)
From old datasheet system
|
ON Semiconductor
|
| C4D20120D |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| C4D20120A |
Silicon Carbide Schottky Diode
|
Cree
|
| IDM02G120C5 IDM02G120C5-15 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
|
| IDH05G120C5 IDH05G120C5-15 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
|
| SDT05S6008 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
|
| SDT12S6008 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
|
|
